TMS428169A memories equivalent, dynamic random-access memories.
maximum RAS access times of 50-, 60-, and 70 ns, and the
OE
RAS
VCC VSS W
Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
TMS428169A features .
of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION D.
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